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The power amplifier which is designed by using BJT (Bipolar Junction Transistor) has a larger power consumption, hence in this research, the FET GaAs p-HEMT MMG15241H is used. The power amplifier designed in this research uses microstrip-based and works at the middle frequency of 1.27 GHz. This research yielded a power amplifier which works at the bandwidth with a range frequency of 1.265 Â¢?? 1.275 GHz, a gain result of 20.02 dB, and input return loss result of -24.45 dB.
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 ORARI, “Keputusan Ketua Umum Organisasi Amatir Radio Indonesia Nomor KEP-065/OP/KU/2009 tentang Pembagian dan Penggunaan Segmen Band Frekuensi Amatir Radio (Bandplan).” pp. 1–9, 2009.
 J. Tetuko and S. Sumantyo, “Development of Circularly Polarized Synthetic Aperture Radar (CP-SAR) Onboard Small Satellite,” pp. 334–341, 2011.
 K. Hayat, A. Kashif, S. Azam, T. Mehmood, and M. Imran, “High performance GaN HEMT class-AB RF power amplifier for L-band applications,” Proc. 2013 10th Int. Bhurban Conf. Appl. Sci. Technol. IBCAST 2013, pp. 389–392, 2013.
 W. I. Prayogo, Y. Taryana, T. Praludi, Y. Sulaeman, Y. Wahyu, and B. S. Nugroho, “High Power Amplifier (HPA) pada Frekuensi 437,430 MHz untuk Aplikasi TTC Downlink Nano Satelit TEL-U SAT,” J. Elektron. dan Telekomun., vol. 16, no. 2, pp. 40–45, 2016.
 G. Van Der Bent, A. P. De Hek, and F. E. Van Vliet, “20W S-band high power amplifier using stacked FET topology,” EuMIC 2016 - 11th Eur. Microw. Integr. Circuits Conf., pp. 25–28, 2016.
 J. Lan, J. Zhou, Z. Yu, and B. Yang, “A broadband high efficiency Class-F power amplifier design using GaAs HEMT,” 2015 IEEE Int. Wirel. Symp. IWS 2015, 2015.
 I. J. Bahl, Fundamentals of RF Fundamentals of RF and Microwave. John Wiley & Sons, Inc., 2009.
 G. Gonzalez, Microwave Transistor Amplifiers Analysis and Design, Second Edi. Prentice Hall, 1997.
 C. Bowick, RF Circuit Design, Second Edi. Newnes, 2008.
 B. Syihabuddin, D. A. Nurmantris, and A. D. Prasetyo, “Perancangan Bandpass Filter Pita Sempit pada Frekuensi L-Band untuk Aplikasi Synthetic Aperture Radar (SAR),” vol. 9, no. 2, pp. 198–203, 2017.
 A. Grebennikov, N. Kumar, and B. S. Yarman, Broadband RF and Microwave Amplifiers. CRC Press, 2016.
 N. M. Mahyuddin, N. Liyana, and A. Latif, “A 10 GHz Low Phase Noise Split-Ring Resonator Oscillator,” vol. 3, no. 6, pp. 584–589, 2013.
 NXP, “MMG15241H Datasheet,” pp. 1–18, 2014.
 F. M. Al-Raie, “Design of Input Matching Networks for Class-E RF Power Amplifiers,” High Freq. Electron., no. January, pp. 40–48, 2011